6.774 Physics of Microfabrication: Front End Processing

As taught in: Fall 2004

Image of a silicon wafer.

A silicon wafer that may be exposed to deposition and etching processes. (Image courtesy of NASA Space Research.)

Level:

Graduate

Instructors:

Prof. Judy Hoyt

Prof. L. Rafael Reif
(Contributor)

Course Features

Course Description

This course is offered to graduates and focuses on understanding the fundamental principles of the "front-end" processes used in the fabrication of devices for silicon integrated circuits. This includes advanced physical models and practical aspects of major processes, such as oxidation, diffusion, ion implantation, and epitaxy. Other topics covered include: high performance MOS and bipolar devices including ultra-thin gate oxides, implant-damage enhanced diffusion, advanced metrology, and new materials such as Silicon Germanium (SiGe).

Technical Requirements

Special software is required to use some of the files in this course: .rm.