Archived Versions

6.720J / 3.43J Integrated Microelectronic Devices

As taught in: Spring 2007

Diagram of a transistor.

Schematic diagram of a modern bipolar junction transistor (BJT): cross section shown. (Image by Jesús del Alamo.)




Prof. Jesús del Alamo

Course Features

Course Description

6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points.


Prof. Jesús del Alamo would like to thank Prof. Harry Tuller for his support of and help in teaching the course.

*Some translations represent previous versions of courses.